BAV70

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation VRM VR IF IFSM PD 85 80 250 2 225* 300** Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm) UNIT V V mA A mW BAV70 SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 SOT-23 Marking Type Name H7 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF(1) VF(2) VF(3) IR CT trr TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP. 0.60 0.72 - MAX. - 1.25 0.5 3.0 4.0 UNIT V A pF nS 2009. 1. 23 Revision No : 1 1/2 BAV70 FORWARD CURRENT I F (mA) IF - VF 3 10 2 10 10 C C TaTa=-=2255 Ta=100 C 1 -1 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CUR...