BBY66-05

Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BBY66... BBY66-02V  BBY66-05 BBY66-05W ! , ,  Type BBY66-02V BBY66-05 BBY66-05W Package SC79 SOT23 SOT323 Configuration single common cathode common cathode **For differences see next page Capacitance groups Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Forward current IF Operating temperature range Top Storage temperature Tstg 1Pb-containing package may be available upon special request LS(nH) 0.6 1.8 1.4 Marking h O1s / O2s** OBs Value 12 50 -55 ... 150 -55 ... 150 Unit V mA °C 1 2007-04-20 BBY66... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 65 °C IR nA - - 20 - - 200 AC Characteristics Diode capacitance1) VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz CT pF 66 68.7 71.5 33 35.4 38 19.7 20.95 22.2 12 12.7 13.5 Capacitance ratio CT1/CT4.5 VR = 1 V, VR = 4.5 V Series resistance VR = 1 V, f = 470 MHz rS 1Capacitance groups at 1V, coded 01; 02 (only BBY66-05) CT/groups 01 02 C1V min 66pF 68.5pF C1V max 69pF 71.5pF Deliveries c...