SCS212AJ

SCS212AJ SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline LPT(L) Data Sheet (1) (2) (3) (4) lInner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1,000 Taping code TLL Marking SCS212AJ lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation VR 650 V IF 12*1 A 45*2 A IFSM 170*3 A 36*4 A IFRM 47*5 A PD 88*6 W Junction temperature Tj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.12 - Rev.A SCS212AJ Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.24mA 600 - - IF=12A,Tj=25°C - 1.35 1.55 Forward voltage VF IF=12A,Tj=150°C - 1.55 - IF=12A,Tj=175°C - 1.63 - VR=600V,Tj=25°C - 2.4 240 Reverse current IR VR=600V,Tj...