S6302

S6302 SiC Schottky Barrier Diode Bare Die VR 1200V IF 10A*1 QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 10*1 45*2 IFSM 190*3 33*4 IFRM 46*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10ms square,Tj=25°C *4 Pw=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/3 2014.05 - Rev.A S6302 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.2mA 1200 - - IF=10A,Tj=25°C - 1.4 1.6 Forward voltage VF IF=10A,Tj=150°C - 1.8 - IF=10A,Tj=175°C - 1.9 - VR=1200V,Tj=25°C - 10 200 Reverse current IR VR=1200V,Tj=150°C - 80 - VR=1200V,Tj=175°C - 130 - Total capacitance VR=1V,f=1MHz C VR=800V,f=1MHz - 550 - 42 - Total capacitive charge Qc VR=800V,di/dt=500A/ms - 34 - Switching time tc VR=800V,di/dt=500A/ms - 15 - Unit V V V V mA mA mA pF pF nC ns www.rohm.com © 2014 ROHM C...