S2305

S2305 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 450mW 10A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS-surge*3 Tj Tstg Value 1200 10 25 -6 to 22 -10 to 26 175 -55 to +175 Unit V A A V V °C °C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.02 - Rev.C S2305 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - -V Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance VDS = 1200V, VGS = 0V IDSS Tj = 25°C Tj = 150°C IGSS+ VGS = +22V, VDS = 0V IGSS- VGS = -6V, VDS = 0V VGS (th) VDS = VGS, ID = 0.9mA VGS = 18V, ID = 3A RDS(on) *4 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain 1.6 - *1 Limited only by maximum t...