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Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and VHF-tuners with AGC function
• Supporting 5 V operations and power saving 3 V operations
• Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BF5030...
3
4
2 1
AGC G2 HF G1 Input
RG1
VGG
Drain GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5030
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF5030R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF5030W
SOT343 1=D 2=S 3=G1 4=G2 -
-
HF Output + DC
EHA07461
Marking KXs KXs KXs
1 2009-05-05
BF5030...
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 94 °C, BF5030W TS ≤ 76 °C, BF5030, BF5030R Storage temperature Channel temperature
Thermal Resistance Parameter Channel - soldering point1) BF5030W BF5030, BF5030R
Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot
Tstg Tch
Symbol Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value 8 25 ±1 ±6
200 200 -55 ... 150 150
Value
≤ 280 ≤ 370
Unit V mA mA V mW
°C
Unit K/W
2 2009-05-05
BF5030...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V VDS = 5 V, VG1S = 0 , VG2S = 4 V
V(BR)DS
12
+V(BR)G1SS 6
+V(BR)G2SS 6
+IG1SS
-
+IG2SS
-
IDSS
-
-- 15 - 15 - 50 - 50
- 100 - 100
Drain-source current
VDS = 3 V, VG2S = 3 V, RG1 = 82 kΩ VDS = 5 V, VG2S = 4 V, RG1 = 180 kΩ
IDSX
- 13 - 13 -
Gate1-source pinch-off voltage
VDS = 3 V, VG2S = 3 V, ID = 20 µA VDS = 5 V, VG2S = 4 V, ID = 20 µA
VG1S(p)
- 0.7 - 0.7 -
Gate2-source pinch-off voltage
VDS = 3 V, VG1S = 3 V, ID = 20 µA VDS = 5 V, VG1S = 4 V, ID = 20 µA
VG2S(p)
- 0.7 - 0.7 -
Unit V
nA
mA V
3 2009-05-05
BF5030...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics - (verified by random sampling)
Forward transconductance
VDS = 3 V, ID = 10 mA, VG2S = 3 V VDS = 5 V, ID = 10 mA, VG2S = 4 V Gate1 input capacitance
VDS = 3 V, ID = 10 mA, VG2S = 3 V VDS = 5 V, ID = 10 mA, VG2S = 4 V
gfs Cg1ss
- 41 - 41 -
- 2.7 - 2.8 -
Output capacitance
VDS = 3 V, ID = 10 mA, VG2S = 3 V VDS = 5 V, ID = 10 mA, VG2S = 4 V
Power gain
VDS = 3 V, ID = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, ID = 10 mA, VG2S = 3 V, f = 45 MHz VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V,.