Document
Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BF5020...
3
4
2 1
AGC G2 HF G1 Input
RG1
VGG
Drain GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5020
SOT143 1 = S 2 = D 3 = G2 4 = G1 -
-
BF5020R
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -
-
BF5020W
SOT343 1 = D 2 = S 3 = G1 4 = G2 -
-
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature
Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot
Tstg Tch
Value 8 25
± 10 ±6
200 200 -55 ... 150 150
HF Output + DC
EHA07461
Marking KYs KYs KYs
Unit V mA mA V mW
°C
1 2009-10-01
Thermal Resistance Parameter Channel - soldering point1) BF5020, BF5020R BF5020W
Symbol Rthchs
BF5020...
Value
≤ 370 ≤ 280
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA, VG1S = 2 V
V(BR)DS
12 -
-V
+V(BR)G1SS 6
- 15
+V(BR)G2SS 6
- 15
+IG1SS
- - 50 nA
+IG2SS
- - 50
IDSS
- - 100
IDSX
- 14 - mA
VG1S(p)
- 0.7 - V
VG2S(p)
- 0.7 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2009-10-01
BF5020...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics - (verified by random sampling)
Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz
gfs Cg1ss Cdss Gp
- 34 - 2.4 -1-
- 26 -
VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz
- 32 -
Unit mS pF
dB
Noise figure
VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz
VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz
F dB - 1.2 - 0.8 -
Gain control range VDS = 5 V, VG2S = 4...0 V Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ AGC = 0
AGC = 10 dB AGC = 40 dB
∆Gp Xmod
- 45 -
dBµV
- 98
-
- 96
-
- 106 -
1Input level for k = 1%; fw = 50 MHz, funw = 60 MHz
3 2009-10-01
BF5020...
Total power dissipation Ptot = ƒ(TS) BF5020W
Total power dissipation Ptot = ƒ(TS) BF5020, BF5020R
ID Ptot IG1 Ptot
220 mA
180 160 140 120 100
80 60 40 20
00 15 30 45 60 75 90 105 120 °C 150
TS
Output characteristics ID = ƒ(VDS)
20 mA
1.5V
16
14 1.4V
12 1.3V
10
8 1.2V 6
1.1V 4
2
00 2 4 6 8 V 12
VDS
220 mW
180 160 140 120 100
80 60 40 20
00 15 30 45 60 75 90 105 120 °C 150
TS
Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter
180 µA
140
120
4V
100 3.5V
3V
80
2.5V 2V
60
40
20
00 0.5 1 1.5 2 V
3
VG1S
4 2009-10-01
BF5020...
ID gfs ID ID
Gate 1 forward transconductance
gfs = ƒ(ID) VDS = 5V, VG2S = Parameter
50 mS
4V
40 3V 35
30
25
20 2V
15
10 1.5V
5
00 5 10 15 20 25 30 35 mA 45
ID
Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter
30 mA
24
22
20
4V 3V
18 2 V
16
1.5 V 1V
14
12
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8 VG1S
Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 120 kΩ
(connected to VGG, VGG=gate1 supply voltage)
16 mA
12
10
8
6
4
2
00 1 2 3 V 5
VGG
Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ
24 mA
68K
20 82K
18 100K
16 120K
14 12 150K
180K 10
8
6
4
2
00 1 2 3 4 V 6 VGG=VDS
5 2009-10-01
BF5020...
ID AGC
Drain current ID = ƒ(VG2S) VDS = 5 V, RG1 = Parameter in kΩ
28 mA
82K 24
22
20
18 120K 16
14
12
10
8
6
4
2
00 0.5 1 1.5 2 2.5 3 V
4
VG2S
AGC characteristic AGC = ƒ(VG2S) f = 50 MHz
measured in test circuit, see page 7
0 Rg=120KOHm
dB
Rg=82KOHm -20
-30
-40
-50
-60
-70
-800.5 1 1.5 2 2.5 3 V
4
VG2S
AGC Vunw
AGC characteristic AGC = ƒ(VG2S) f = 800 MHz
measured in test circuit, see page 7
0 dB Rg1=120KOHm
-10
Rg1=82KOHm
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-700.5 1 1.5 2 2.5 3 V
4
VG2S
Crossmodulation Vunw = (AGC) VDS = 5 V
measured in test circuit, see page 7
107 dBµV
RG1=82KOHm_22m
104 103 102 101 100
99 98 97 96 95 94 93 920
RG1=120KOHm_15m
5 10 15 20 25 30 35 40 dB 50
AGC
6.