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BF5020W Dataheets PDF



Part Number BF5020W
Manufacturers Infineon
Logo Infineon
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF5020W DatasheetBF5020W Datasheet (PDF)

Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF5020... 3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Packag.

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Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF5020... 3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5020 SOT143 1 = S 2 = D 3 = G2 4 = G1 - - BF5020R SOT143R 1 = D 2 = S 3 = G1 4 = G2 - - BF5020W SOT343 1 = D 2 = S 3 = G1 4 = G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Value 8 25 ± 10 ±6 200 200 -55 ... 150 150 HF Output + DC EHA07461 Marking KYs KYs KYs Unit V mA mA V mW °C 1 2009-10-01 Thermal Resistance Parameter Channel - soldering point1) BF5020, BF5020R BF5020W Symbol Rthchs BF5020... Value ≤ 370 ≤ 280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA, VG1S = 2 V V(BR)DS 12 - -V +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 nA +IG2SS - - 50 IDSS - - 100 IDSX - 14 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.7 - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-10-01 BF5020... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz gfs Cg1ss Cdss Gp - 34 - 2.4 -1- - 26 - VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz - 32 - Unit mS pF dB Noise figure VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz F dB - 1.2 - 0.8 - Gain control range VDS = 5 V, VG2S = 4...0 V Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ AGC = 0 AGC = 10 dB AGC = 40 dB ∆Gp Xmod - 45 - dBµV - 98 - - 96 - - 106 - 1Input level for k = 1%; fw = 50 MHz, funw = 60 MHz 3 2009-10-01 BF5020... Total power dissipation Ptot = ƒ(TS) BF5020W Total power dissipation Ptot = ƒ(TS) BF5020, BF5020R ID Ptot IG1 Ptot 220 mA 180 160 140 120 100 80 60 40 20 00 15 30 45 60 75 90 105 120 °C 150 TS Output characteristics ID = ƒ(VDS) 20 mA 1.5V 16 14 1.4V 12 1.3V 10 8 1.2V 6 1.1V 4 2 00 2 4 6 8 V 12 VDS 220 mW 180 160 140 120 100 80 60 40 20 00 15 30 45 60 75 90 105 120 °C 150 TS Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter 180 µA 140 120 4V 100 3.5V 3V 80 2.5V 2V 60 40 20 00 0.5 1 1.5 2 V 3 VG1S 4 2009-10-01 BF5020... ID gfs ID ID Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 50 mS 4V 40 3V 35 30 25 20 2V 15 10 1.5V 5 00 5 10 15 20 25 30 35 mA 45 ID Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter 30 mA 24 22 20 4V 3V 18 2 V 16 1.5 V 1V 14 12 10 8 6 4 2 00 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8 VG1S Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 120 kΩ (connected to VGG, VGG=gate1 supply voltage) 16 mA 12 10 8 6 4 2 00 1 2 3 V 5 VGG Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 24 mA 68K 20 82K 18 100K 16 120K 14 12 150K 180K 10 8 6 4 2 00 1 2 3 4 V 6 VGG=VDS 5 2009-10-01 BF5020... ID AGC Drain current ID = ƒ(VG2S) VDS = 5 V, RG1 = Parameter in kΩ 28 mA 82K 24 22 20 18 120K 16 14 12 10 8 6 4 2 00 0.5 1 1.5 2 2.5 3 V 4 VG2S AGC characteristic AGC = ƒ(VG2S) f = 50 MHz measured in test circuit, see page 7 0 Rg=120KOHm dB Rg=82KOHm -20 -30 -40 -50 -60 -70 -800.5 1 1.5 2 2.5 3 V 4 VG2S AGC Vunw AGC characteristic AGC = ƒ(VG2S) f = 800 MHz measured in test circuit, see page 7 0 dB Rg1=120KOHm -10 Rg1=82KOHm -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -700.5 1 1.5 2 2.5 3 V 4 VG2S Crossmodulation Vunw = (AGC) VDS = 5 V measured in test circuit, see page 7 107 dBµV RG1=82KOHm_22m 104 103 102 101 100 99 98 97 96 95 94 93 920 RG1=120KOHm_15m 5 10 15 20 25 30 35 40 dB 50 AGC 6.


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