Low VCE(sat) transistor (strobe flash)
2SD2118
zFeatures
1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A)
2...
Low VCE(sat)
transistor (strobe flash)
2SD2118
zFeatures
1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics. 3) Complements the 2SB1412.
zDimensions (Unit : mm)
2SD2118
zStructure Epitaxial planar type
NPN silicon
transistor
ROHM : CPT3 EIAJ : SC-63
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
IC 5 ICP 10
Collector power
dissipation
2SD2118
Junction temperature
PC Tj
1 10 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=10ms
Unit V V V
A(DC) A(Pulse) ∗1
W W(Tc=25°C)
°C °C
∗ Denotes hFE
(1) Base (2) Collector (3) Emitter
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
∗ Measured using pulse current.
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob
50 20 6 − − − 120 − −
Typ. − − − − − 0.3 −
150 35
Max. − − − 0.5 0.5 1.0
390 − −
Unit V V V µA µA V −
MHz pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=40V
VEB=5V
IC/IB=4A/0.1A
∗
VCE=2V, IC=0.5A
∗
VCE=6V, IE=−50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
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1/3
2009.11 - Rev.C
2SD2118
zPacka...
