Schottky Barrier Diode
RBR5L40A
lApplication General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand ...
Schottky Barrier Diode
RBR5L40A
lApplication General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
4.5±0.2 1.2±0.3
5.0±0.3 2.0
4.2
lFeatures 1) Small power mold type
(PMDS)
2) High reliability 3) Low VF
12
1.5±0.2
0.1±0.02 2.0±0.2
PMDS
lStructure
Cathode
ROHM : PMDS JEDEC : SOD-106
1 2 : Manufacture Date
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05 4.0±0.1
fφ 1.55±0.05
Anode
0.3
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
4.0±0.1
fφ 1.55
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load , Tc=45ºC Max.
60Hz half sin wave, one cycle, non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
40 5 50 150
V A A °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions IF=5.0A VR=40V
Min. Typ. Max. Unit - - 0.53 V - - 200 mA
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A
RBR5L40A lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF (A)
10 Tj = 150°C
Tj = 125°C 1
Tj = 75°C 0.1
Tj = 25°C
0.01 0
Tj = -25°C 100 200 300 400 500...