Document
MCR703A MCR704A MCR706A MCR708A
SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
4.0 AMP, 100 THRU 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded SCRs designed for sensing circuit and control system applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL MCR703A MCR704A MCR706A MCR708A UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
100
200
400 600 V
RMS On-State Current (TC=85°C)
IT(RMS)
4.0 A
Peak non-Repetitive Surge Current
(1/2 cycle Sine wave, 50Hz/60Hz)
ITSM
15 A
I2t Value for Fusing, t=10ms
I2t
1.1 A2s
Peak Gate Power, tp=1.0μs Average Gate Power Dissipation Peak Gate Current, tp=1.0μs Critical Rate of Rise of On-State Current
PGM PG (AV)
IGM di/dt
0.5 W 0.1 W 0.2 A 50 A/μs
Storage Temperature Junction Temperature
Tstg TJ
-40 to +150 -40 to +125
°C °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10 μA
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
200 μA
IGT VD=12V, RL=10Ω
38 75 μA
IH IT=50mA, RGK=1.0KΩ
0.25 2.0 mA
VGT
VD=12V, RL=10Ω
0.55 0.8
V
VTM
ITM=8.0A, tp=380μs
1.6 1.8 V
dv/dt
VD=2/3 VDRM, RGK=1.0KΩ, TC=125°C
10
V/μs
R2 (21-January 2013)
MCR703A MCR704A MCR706A MCR708A
SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
4.0 AMP, 100 THRU 600 VOLT
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R2 (21-January 2013)
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