BUK7K5R6-30E

LFPAK56D BUK7K5R6-30E Dual N-channel 30 V, 5.6 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 10 A; VDS = 24 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 30 V - - 40 A - 4.76 5.6 mΩ - 9.5 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7K5R6-30E Dual N-channel 30 V, 5.6 mΩ standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 sour...