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DBD250G

ON Semiconductor

25.0A Single-Phase Bridge Rectifier

Ordering number : ENA1204A DBD250G 25.0A Single-Phase Bridge Rectifier http://onsemi.com Features • Plastic molde...


ON Semiconductor

DBD250G

File Download Download DBD250G Datasheet


Description
Ordering number : ENA1204A DBD250G 25.0A Single-Phase Bridge Rectifier http://onsemi.com Features Plastic molded structure Glass passivation for high reliability Peak reverse voltage : VRM=600V Average output current : IO=25.0A Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Symbol VRM Average Output Current IO Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage IFSM Tj Tstg VIS Conditions Ta=40°C Ta=40°C, With 300✕300✕3.0mm3 Cu fin 50Hz sine wave, 1cycle Terminals tc case, AC 1 minute Raitings 600 6.0 25.0 400 150 --40 to +150 2 Unit V A A A °C °C kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Tc=25°C *Per Constituent element of bridge. Parameter Symbol Conditions Forward Voltage Reverse Current VF IR Thremal Resistance Rth(j-c) Note) Maximum tightening torque : 0.98Nm IF=12.5A* VR:At each VRM* Junction-Case Raitings min typ max Unit 1.05 V 10 mA 1.5 °C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Package Dimensions unit:mm(typ.) 32.0 MAX 9 7.95 3....




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