E25A2CPS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V(Min.) POLARITY E25A2CPS (+ Type) E25A2CPR (- Type) E25A2CPS, E25A2CPR STACK SILICON DIFFUSED DIODE D F2 E F1 G B L1 L2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Repetitive Peak Reverse Voltage VRRM Non-Repetitive Peak Reverse Voltage PRM Average Forward Current IF(AV) Peak 1 Cycle Surge Current IFSM Junction Temperature Storage Temperature Range Tj Tstg RATING 200 1.35 (Pulse duration 30ỌS Non-repetitive) 25 250 (10mS Condition Half sine wave 1 cycle) -40ᴕ200 -40ᴕ200 UNIT V kW A A ᴱ ᴱ A DIM MILLIMETERS DIM MILLIMETERS A Φ11.7+0.1/-0 F1 0.32 B 3.85+0/-0.2 D Φ1.45+_ 0.1 F2 G 3.1 0.5 E 1.55 L1 8.4 MAX DIM TYPE POLARITY L2 S R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 PF ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time VFM VRM IRRM trr Transient Thermal Resistance ẤVF Reverse Leakage Current Under High Temperature HIR Temperature Resistance Rth TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA IFM=100A, Im=100mA, Pt=100mS Ta=150ᴱ, VR=VRM Junction to Case Junction to Fin MIN. - 200 - - TYP. - - MAX. 1.18 50 15 150 UNIT V V ỌA ỌS mV - - 2.5 mA - - 0.93 ᴱ/W - - 1.13 1998. 2. 19 Revision No : 0 1/1 ...