STACK SILICON DIFFUSED DIODE
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAve...
Description
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY ᴌCC TYPE ᴌCATHODE COMMON
13
ᴌCA TYPE ᴌANODE COMMON
13
22
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
F1B2CCI F1B2CAI
Average Output Rectified
Current (Tc=101ᴱ) (Fig.)
Peak One Cycle Surge Forward Current (Non-Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL VRRM
IO
IFSM Tj Tstg
RATING 200
10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150
UNIT V A
A ᴱ ᴱ
GF B P
A U
E
S
K
T LL
M DD
J
NN T
T
123
C
DIM A
B C
D E F
G RH
J K L
VM N O
P
Q HR
S
T U
V
MILLIMETERS 10.30 MAX
15.30 MAX 2.70Ź0.30 0.85 MAX Ѹ3.20Ź0.20 3.00Ź0.30 12.30 MAX 0.75 MAX 13.60Ź0.50 3.90 MAX
1.20 1.30
2.54 4.50Ź0.20
6.80 2.60Ź0.20
10Ɓ 25Ş 5Ş 0.5
2.60Ź0.15
O Q
CC TYPE
1. ANODE 2. CATHODE COM 3. ANODE
CA TYPE
1. CATHODE 2. ANODE COM 3. CATHODE
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage (Note) Repetitive Peak Reverse Current (Note) Reverse Recovery Time
VFM IRRM
trr
Thermal Resistance Note : A Value of one cell.
Rth(j-c)
TEST CONDITION IFM=5A VRRM=Rated IF=0.1A, IR=0.1A Junction to Case
MIN. -
TYP. -
MAX. 1.4 10 400 3.5
UNIT V ỌA nS
ᴱ/W
Fig. EXAMPLE OF RECTIFING CIRCUIT
I O =10A
LOAD
RECTIFIER STACK
1997. 12. 2
Revision No : 2
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