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2N5115 Dataheets PDF



Part Number 2N5115
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON P-CHANNEL JFETS
Datasheet 2N5115 Datasheet2N5115 Datasheet (PDF)

2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (.

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2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 500 - 500 IGSS VGS=20V, TA=150°C - 1.0 - 1.0 IDSS VDS=18V 30 90 -- IDSS VDS=15V -- 15 60 ID(OFF) VDS=15V, VGS=12V - 500 -- ID(OFF) VDS=15V, VGS=7.0V -- - 500 ID(OFF) VDS=15V, VGS=5.0V -- -- ID(OFF) VDS=15V, VGS=12V, TA=150°C - 1.0 -- ID(OFF) VDS=15V, VGS=7.0V, TA=150°C - - - 1.0 ID(OFF) VDS=15V, VGS=5.0V, TA=150°C - - -- BVGSS IG=1.0μA 30 - 30 - VGS(OFF) VDS=15V, ID=1.0nA 5.0 10 3.0 6.0 VGS(f) IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=15mA - 1.3 -- VDS(ON) ID=7.0mA -- - 0.8 VDS(ON) ID=3.0mA -- -- rDS(ON) ID=1.0mA, VGS=0 - 75 - 100 rds(ON) VGS=0, ID=0, f=1.0kHz - 75 - 100 Ciss VDS=15V, VGS=0, f=1.0MHz - 25 - 25 Crss VGS=12V, VDS=0, f=1.0MHz - 7.0 -- Crss VGS=7.0V, VDS=0, f=1.0MHz -- - 7.0 Crss VGS=5.0V, VDS=0, f=1.0MHz -- -- 2N5116 MIN MAX - 500 - 1.0 -5.0 25 --- 500 --- 1.0 30 1.0 4.0 - 1.0 --- 0.6 - 150 - 150 - 25 --- 7.0 UNITS pA μA mA mA pA pA pA μA μA μA V V V V V V Ω Ω pF pF pF pF R1 (4-March 2014) 2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ton VDD=10V, VGS=12V, ID=15mA, RL=580Ω - 16 -- ton VDD=6.0V, VGS=7.0V, ID=7.0mA, RL=743Ω - - - 30 ton VDD=6.0V, VGS=5.0V, ID=3.0mA, RL=1.8kΩ - - -- toff VDD=10V, VGS=12V, ID=15mA, RL=580Ω - 21 -- toff VDD=6.0V, VGS=7.0V, ID=7.0mA, RL=743Ω - - - 38 toff VDD=6.0V, VGS=5.0V, ID=3.0mA, RL=1.8kΩ - - -- 2N5116 MIN MAX --- 42 --- 60 UNITS ns ns ns ns ns ns TO-18 CASE - MECHANICAL OUTLINE w w w. c e n t r a l s e m i . c o m LEAD CODE: 1) Source 2) Gate 3) Drain MARKING: FULL PART NUMBER R1 (4-March 2014) .


2N5114 2N5115 MUR1005CT


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