C3052

Elektronische Bauelemente 2SC3052 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free 3.COLLECTOR FEATURES 1.BASE 2.EMITTER n Excellent linearity of DC forward current gain n RoHS Compliant Product n Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) D A L 3 Top View 12 BS VG C H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS* TA=25oC unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 50 50 6 0.2 150 125,-55~125 V V V A mW oC ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified ) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure CLASSIFICATION OF hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF Test conditions Ic=100 µ A, IE=0 Ic= 100µA, IB=0 IE= 100µ A, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC=...