STP18N60DM2

STP18N60DM2 N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 12 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) Order code STP18N60DM2 AM15572v1_tab Table 1: Device summary Marking 18N60DM2 Package TO-220 Packing Tube January 2016 DocID027674 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents Contents STP18N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .......................................