STH290N4F6-2AG

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6 Packing Tape and Reel July 2015 DocID027971 Rev 1 This is information on a product in full production. 1/19 www.st.com Contents Contents STH290N4F6-2AG, STH290N4F6-6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .........................................................................