N-channel Power MOSFET
STF26N60M2, STFI26N60M2
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages
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Description
STF26N60M2, STFI26N60M2
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
123
TO-220FP
123
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
Features
Order code STF26N60M2 STFI26N60M2
VDS @ TJmax
650 V
RDS(on) max.
0.165 Ω
ID 20 A
PTOT
30 W
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
Applications
Switching applications LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Order code STF26N60M2 STFI26N60M2
Table 1: Device summary
Marking
Package
26N60M2
TO-220FP I²PAKFP
Packing Tube
July 2015
DocID027600 Rev 2
This is information on a product in full production.
1/15
www.st.com
Contents
Contents
STF26N60M2, STFI26N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..............................................................
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