STF10LN80K5

STF10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STF10LN80K5 AM15572v1_no_tab Table 1: Device summary Marking Package 10LN80K5 TO-220FP Packing Tube December 2015 DocID027751 Rev 3 This is information on a product in full production. 1/14 www.st.com Contents Contents STF10LN80K5 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-22...