STB37N60DM2AG

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB Features Order code STB37N60DM2AG VDS 600 V RDS(on) max. 0.110 Ω ID 28 A PTOT 210 W 3 1 D2PAK Figure 1: Internal schematic diagram  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STB37N60DM2AG Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing 37N60DM2 D²PAK Tape and reel August 2015 DocID028271 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents Contents STB37N60DM2AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits .........................................................