Document
STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1 D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS
STB35N60DM2 600 V
RDS(on) max.
0.110 Ω
ID PTOT 28 A 210 W
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STB35N60DM2
Table 1: Device summary
Marking
Package
35N60DM2
D²PAK
Packing Tape and reel
September 2015
DocID028331 Rev 1
This is information on a product in full production.
1/15
www.st.com
Contents
Contents
STB35N60DM2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 D²PAK (TO-263) type A package information ................................... 9 4.2 D²PAK packing information ............................................................. 12
5 Revision history ............................................................................ 14
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STB35N60DM2
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings Parameter
VGS
ID
IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg
Tj
Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness Storage temperature Operating junction temperature
Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 28 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400. (3) VDS ≤ 480 V.
Symbol
Rthj-case Rthj-pcb(1)
Table 3: Thermal data Parameter
Thermal resistance junction-case Thermal resistance junction-pcb
Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Symbol
IAR EAS(1)
Table 4: Avalanche characteristics Parameter
Avalanche current, repetitive or not repetitive Single pulse avalanche energy
Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Electrical ratings
Value ±25 28 17 112 210 50 50
-55 to 150
Unit V A A W
V/ns
°C
Value 0.6 30
Unit °C/W
Value 6
650
Unit A mJ
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3/15
Electrical characteristics
STB35N60DM2
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
IGSS
Gate-body leakage current
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VGS(th) RDS(on)
Gate threshold voltage
Static drain-source onresistance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 14 A
Min. Typ. Max. Unit 600 V
10 µA
100
±5 µA 3 4 5V
0.094 0.11 Ω
Symbol Ciss Coss Crss
Coss
(1) eq.
RG Qg Qgs Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Min. Typ. Max. Unit - 2400 - 110 - pF - 2.8 -
VDS = 0 to 480 V, VGS = 0 V
- 190 - pF
f = 1 MHz, ID = 0 A
-
VDD = 480 V, ID = 28 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior")
-
4.3 54 14.6 24.2
-
Ω nC
Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STB35N60DM2
Symbol Parameter
td(on)
Turn-on delay time
tr td(off)
Rise time
Turn-off delay time
tf Fall time
Table 7: Switching times Test conditions
Electrical characteristics Min. Typ. Max. Unit
- 21.2 -
VDD = 300 V, ID = 14 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for
- 17 -
resistive load switching times" and Figure 19:
"Switching time waveform")
- 68 -
- 10.7 -
ns
Symbol Parameter
ISD
Source-drain current
ISDM(1)
Source-drain current (pulsed)
VSD(2)
Forward on voltage
trr
Reverse recovery time
Reverse Qrr recovery
charge
Reverse IRRM recovery
current
trr
Reverse recovery time
Reverse Qrr recovery
charge
Reverse IRRM recovery
current
Table 8: Source-drain diode Test conditions
Min. Typ. Max. Unit - 28 A
- 112.