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STB35N60DM2 Dataheets PDF



Part Number STB35N60DM2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STB35N60DM2 DatasheetSTB35N60DM2 Datasheet (PDF)

STB35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high volta.

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STB35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STB35N60DM2 Table 1: Device summary Marking Package 35N60DM2 D²PAK Packing Tape and reel September 2015 DocID028331 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents Contents STB35N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 D²PAK (TO-263) type A package information ................................... 9 4.2 D²PAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID028331 Rev 1 STB35N60DM2 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness Storage temperature Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 28 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400. (3) VDS ≤ 480 V. Symbol Rthj-case Rthj-pcb(1) Table 3: Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-pcb Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Symbol IAR EAS(1) Table 4: Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V. Electrical ratings Value ±25 28 17 112 210 50 50 -55 to 150 Unit V A A W V/ns °C Value 0.6 30 Unit °C/W Value 6 650 Unit A mJ DocID028331 Rev 1 3/15 Electrical characteristics STB35N60DM2 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, Tcase = 125 °C VDS = 0 V, VGS = ±25 V VGS(th) RDS(on) Gate threshold voltage Static drain-source onresistance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 14 A Min. Typ. Max. Unit 600 V 10 µA 100 ±5 µA 3 4 5V 0.094 0.11 Ω Symbol Ciss Coss Crss Coss (1) eq. RG Qg Qgs Qgd Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Table 6: Dynamic Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Min. Typ. Max. Unit - 2400 - 110 - pF - 2.8 - VDS = 0 to 480 V, VGS = 0 V - 190 - pF f = 1 MHz, ID = 0 A - VDD = 480 V, ID = 28 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 4.3 54 14.6 24.2 - Ω nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 DocID028331 Rev 1 STB35N60DM2 Symbol Parameter td(on) Turn-on delay time tr td(off) Rise time Turn-off delay time tf Fall time Table 7: Switching times Test conditions Electrical characteristics Min. Typ. Max. Unit - 21.2 - VDD = 300 V, ID = 14 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for - 17 - resistive load switching times" and Figure 19: "Switching time waveform") - 68 - - 10.7 - ns Symbol Parameter ISD Source-drain current ISDM(1) Source-drain current (pulsed) VSD(2) Forward on voltage trr Reverse recovery time Reverse Qrr recovery charge Reverse IRRM recovery current trr Reverse recovery time Reverse Qrr recovery charge Reverse IRRM recovery current Table 8: Source-drain diode Test conditions Min. Typ. Max. Unit - 28 A - 112.


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