STB18N60DM2

STB18N60DM2 Datasheet N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected ID 12 A Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STB18N60DM2 Product summary Order code STB18N60DM2 Marking 18N60DM2 Package D²PAK Packing Tape and reel DS10962 - Rev 4 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area...