STAP85025S

STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1. Pin connection Drain Description The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio. The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Gate Source Features Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Package STAP85025S STAP85025S STAP1 Packing Tube December 2015 This is information on a product in full production. DocID15795 Rev 5 1/13 www.st.com Contents Contents STAP85025S 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . ...