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IRUH3301A2BP Dataheets PDF



Part Number IRUH3301A2BP
Manufacturers International Rectifier
Logo International Rectifier
Description Radiation Hardended Ultra Low Dropout Adjustable Positive Linear Regulator
Datasheet IRUH3301A2BP DatasheetIRUH3301A2BP Datasheet (PDF)

PD-97590B (5962F1023502K) IRUH3301A2BK Radiation Hardended Ultra Low Dropout IRUH3301A2BP Adjustable Positive Linear Regulator +5.0VIN to VADJ @3.0A Product Summary Part Number Dropout IO VIN VOUT IRUH3301A2BK IRUH3301A2BP 0.4V 3.0A 5.0V ADJ MO-078AA Description The IRUH3301A2 is a space qualified, ultra low dropout linear regulator designed specifically for applications requiring high reliability, low noise and radiation hardness. The output voltage can be adjusted to a low 0.8.

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PD-97590B (5962F1023502K) IRUH3301A2BK Radiation Hardended Ultra Low Dropout IRUH3301A2BP Adjustable Positive Linear Regulator +5.0VIN to VADJ @3.0A Product Summary Part Number Dropout IO VIN VOUT IRUH3301A2BK IRUH3301A2BP 0.4V 3.0A 5.0V ADJ MO-078AA Description The IRUH3301A2 is a space qualified, ultra low dropout linear regulator designed specifically for applications requiring high reliability, low noise and radiation hardness. The output voltage can be adjusted to a low 0.8V with a droput voltage of 400mV at the full rated current of 3.0 Amps. Absolute Maximum Ratings Features n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg n Space Level Screened n Fast Transient Response n Timed Latch-Off Over-Current Protection n Internal Thermal Protection n Adjustable Output as low as 0.8V n On/Off Control via Shutdown Pin, Power Sequencing Easily Implemented n Isolated Hermetic MO-078AA Package Ensures Higher Reliability n This part is also available in 8-Lead Flat Pack Package as IRUH3301A2AK / IRUH3301A2AP Parameter Symbol Min. Max. Units Power Dissipation @ TC = 125°C Maximum Output Current @ Maximum Power Dissipation with no Derating Non-Operating Input Voltage Operating Input Voltage Ground Shutdown Pin Voltage Output Pin Voltage Operating Case Temperature Range Storage Temperature Range Maximmum Junction Temperature Lead Temperature (Soldering 10sec) Pass Transistor Thermal Resistance, Junction to Case PD IO VIN VIN GND VSHDN VOUT TO TS TJ TL RTHJC - 25 W - See Fig 4 A -0.3 +8.0 2.9 6.4 -0.3 0.3 V -0.3 VIN + 0.3 -0.3 VIN + 0.3 -55 +140 -65 - +150 +150 °C - +300 - 1.0 °C/W www.irf.com 1 05/18/12 IRUH3301A2BK IRUH3301A2BP cElectrical Characteristics Pre-Radiation @TC = 25°C, VIN = 5.0V (Unless Otherwise Specified) Parameter Test Conditions Symbol Min. Typ. Max. Units 3.8V ≤ VIN ≤ 5.8V, 50mA ≤ IOUT ≤ 3.0A 3.8V ≤ VIN ≤ 5.8V, 50mA ≤ IOUT ≤ 3.0A, Reference Voltage (Measured @ ADJ Pin) -55°C to +125°C 3.8V ≤ VIN ≤ 5.8V, 50mA ≤ IOUT ≤ 3.0A, Post -Rad cDropout Voltage IO = 3.0A, VOUT = 4.4V, -55°C to +125°C, Post -Rad Current Limit Over-Current Latching, -55°C to +125°C, Post -Rad Over-Current Time-to-Latch IO > ILATCH dMaximum Shutdown Temp. dRipple Rejection dADJ Pin Current F= 120Hz, IO = 50mA, -55°C to +125°C F= 120Hz, IO = 50mA, Post -Rad -55°C to +125°C Minimum SHDN Pin "On" ISOURCE = 200µA, -55°C to +125°C Threshold Voltage Post -Rad Maximum SHDN Pin "Off" ISOURCE = 200µA, -55°C to +125°C Threshold Voltage Post -Rad Output Voltage at Shutdown RLOAD = 36 Ohms, VSHDN = 3.3V -55°C to +125°C, Post-Rad dSHDN Pin Leakage Current VSHDN = 3.3V, -55°C to +125°C,Post-Rad VSHDN = 0.4V dSHDN Pin Pull-Up Current VSHDN = 0.4V, -55°C to +125°C VSHDN = 0.4V, Post-Rad dPower On Reset Threshold Sweep VIN and Measure Output dQuiescent Current No Load Full Load VOUT VDROP ILATCH tLATCH TLATCH PSRR IADJUST VSHDN VSHDN VOUT ISHDN ISHDN VT-POR IQ 0.788 0.800 0.812 0.776 0.800 0.824 0.772 0.800 0.816 V - - 0.4 V 3.5 - - - 10 125 140 65 - 40 - 1.6 - - - 0.8 A ms °C dB mA V 1.2 - - V -0.1 - 0.1 V -10 -98 -140 -98 - 10 µA -56 -30 µA -56 - 1.7 - V - - 15 mA - - 90 Notes:  Connected as shown in Fig.1 and measured at the junction of VOUT and ADJ Pins. ‚ Under normal closed-loop operation. Guaranteed by design. Not tested in production. 2 www.irf.com IRUH3301A2BK IRUH3301A2BP Radiation Performance Characteristics Test Conditions Min Typ Unit MIL-STD-883, Method 1019 (Condition A) Total Ionizing Dose (Gamma) Operating Bias applied during exposure c300 500 Krads (Si) Minimum Rated Load, Vin = 6.4V MIL-STD-883, Method 1019 (Condition D) Total Ionizing Dose (Gamma) (ELDRS) Operating Bias applied during d100 See Krads (Si) exposure Minimum Rated Load, Vin = 6.4V Single Event effects SEU, SEL, SEGR, SEB Heavy Ions (LET) Operating Bias applied during exposure 84 MeV*cm2/mg under varying operating conditions Neutron Fluence MIL-STD-883, Method 1017 1.0e11 Neutrons/cm2 Notes:  Tested to 500Krad (Si). ‚ See Fig. 5. Space Level Screening Requirements TEST/INSPECTION SCREENING LEVEL SPACE Nondestructive Bond Pull Internal Visual Seal Temperature Cycle Constant Acceleration Mechanical Shock PIND Pre Burn-In-Electrical Burn-In Final Electrical Radiographic External Visual 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% MIL-STD-883 METHOD 2023 2017 1014 1010 2001 2002 2020 1015 2012 2009 www.irf.com 3 IRUH3301A2BK IRUH3301A2BP Application Information Input Voltage 0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum VIN VOUT IRUH3301Axxx ADJ SHDN GND Output Voltage R1 0.1uF and 1uF Ceramic; Two 100uF Low ESR Tantalum Fig. 1. Typical Regulator Circuit; Note the SHDN Pin is hardwired in the “ON” position. The ADJ Pin is .


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