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JCS3N25T Dataheets PDF



Part Number JCS3N25T
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS3N25T DatasheetJCS3N25T Datasheet (PDF)

N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ    UPS 3A 250 V 2.2Ω 4.4 nC APPLICATIONS  High frequency switching mode power supply  Electronic ballast  UPS   Crss ( 4.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 4.5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS3N25VT-O-V-N-B JCS3N25RT-O-R-N-B JCS3N25RT-O-R-N-A JCS3N25CT.

  JCS3N25T   JCS3N25T



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N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ    UPS 3A 250 V 2.2Ω 4.4 nC APPLICATIONS  High frequency switching mode power supply  Electronic ballast  UPS   Crss ( 4.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 4.5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS3N25VT-O-V-N-B JCS3N25RT-O-R-N-B JCS3N25RT-O-R-N-A JCS3N25CT-O-C-N-B JCS3N25FT-O-F-N-B JCS3N25VT JCS3N25RT JCS3N25RT JCS3N25CT JCS3N25FT Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) :201510G 1/12 R JCS3N25T ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS3N25VT/RT/CT JCS3N25FT - Drain-Source Voltage VDSS 250 250 Drain Current -continuous ID T=25℃ T=100℃ 3 1.98 3* 1.55* ( 1) Drain Current - pulse (note 1) IDM 12 12* Gate-Source Voltage VGSS ±30 ( 2) Single Pulsed Avalanche Energy (note 2) EAS 305 ( 1) Avalanche Current(note 1) IAR 3 ( 1) Repetitive Avalanche Energy (note 1) EAR 10.1 4.1 ( 3) Peak Diode Recovery dv/dt(note 3) dv/dt 4.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 101 0.81 41 0.33 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201510G 2/12 R ELECTRICAL CHARACTERISTICS JCS3N25T Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 250 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.31 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=250V,VGS=0V, TC=25℃ VDS=200V, TC=125℃ - - 1 μA - - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=1.5A - 1.7 2.2 Ω Forward Transconductance gfs VDS = 40V, ID=1.5A(note 4) - 1.5 - S Dynamic Characteristics Input capacitance Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 130 170 pF - 30 40 pF Reverse transfer capacitance Crss - 4.5 5.8 pF :201510G 3/12 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time td(on) tr VDD=125V,ID=3A,RG=25Ω (note 4,5) Turn-Off delay time td(off) Turn-Off Fall time tf Total Gate Charge - Gate-Source charge - Gate-Drain charge Qg Qgs Qgd VDS =200V , ID=3A VGS =10V (note 4,5) JCS3N25T - 12 23 ns - 25 60 ns - 6 20 ns - 20 48 ns - 4.4 6 nC - 1.3 - nC - 1.8 - nC - Drain-Source Diode Characteristics a.


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