Document
N R N-CHANNEL MOSFET
JCS3N25T
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
UPS
3A 250 V
2.2Ω
4.4 nC
APPLICATIONS High frequency switching
mode power supply Electronic ballast UPS
Crss ( 4.5pF) dv/dt RoHS
FEATURES Low gate charge Low Crss (typical 4.5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS3N25VT-O-V-N-B JCS3N25RT-O-R-N-B JCS3N25RT-O-R-N-A JCS3N25CT-O-C-N-B JCS3N25FT-O-F-N-B
JCS3N25VT JCS3N25RT JCS3N25RT JCS3N25CT JCS3N25FT
Package
IPAK DPAK DPAK TO-220C TO-220MF
Halogen Free
NO NO NO NO NO
Packaging
Tube Tube Brede Tube Tube
Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value JCS3N25VT/RT/CT JCS3N25FT
- Drain-Source Voltage
VDSS
250 250
Drain Current -continuous
ID T=25℃ T=100℃
3 1.98
3* 1.55*
( 1) Drain Current - pulse (note 1)
IDM
12 12*
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy (note 2)
EAS
305
( 1) Avalanche Current(note 1)
IAR
3
( 1)
Repetitive Avalanche Energy (note 1)
EAR
10.1 4.1
( 3) Peak Diode Recovery dv/dt(note 3) dv/dt
4.5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
101 0.81
41 0.33
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
*
*Drain current limited by maximum junction temperature
Unit V A A A V
mJ
A
mJ
V/ns W
W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS3N25T
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
250 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.31 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=250V,VGS=0V, TC=25℃ VDS=200V, TC=125℃
- - 1 μA - - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=1.5A
- 1.7 2.2 Ω
Forward Transconductance
gfs VDS = 40V, ID=1.5A(note 4) - 1.5 - S
Dynamic Characteristics
Input capacitance Output capacitance
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 130 170 pF - 30 40 pF
Reverse transfer capacitance
Crss
- 4.5 5.8 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time
td(on) tr
VDD=125V,ID=3A,RG=25Ω (note 4,5)
Turn-Off delay time
td(off)
Turn-Off Fall time
tf
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Qg Qgs Qgd
VDS =200V , ID=3A VGS =10V (note 4,5)
JCS3N25T
- 12 23 ns - 25 60 ns - 6 20 ns - 20 48 ns - 4.4 6 nC - 1.3 - nC - 1.8 - nC
- Drain-Source Diode Characteristics a.