JCS65N20ABT

N R N-CHANNEL MOSFET JCS65N20ABT MAIN CHARACTERISTICS Package ID 65A VDSS 200 V Rdson（@Vgs=10V） 25mΩ Qg 120nc   UPS APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts  based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS65N20ABT-O-AB-N-B JCS65N20ABT Package TO-3PB Halogen Free NO Packaging Tube Device Weight 5.73g (typ) ：201503A 1/8 R ABSOLUTE RATINGS (Tc=25℃) JCS65N20ABT Parameter Symbol － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse（note 1） IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy （note 2） EAS ( 1) Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy（note 1） EAR Value JCS65N20ABT 200 65 37 260 ±30 1225 65 27.7 ( 3) dv/dt Peak Diode Recovery dv/dt（note 3） 5.4 Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ，TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 277 2.22 -55～+150 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201503A 2/8 R ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient BVDSS ID=250μA, VGS=0V ΔBVDSS/Δ ID=2...