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JCS50N20ABT Dataheets PDF



Part Number JCS50N20ABT
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS50N20ABT DatasheetJCS50N20ABT Datasheet (PDF)

R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT Package.

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R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT Package TO-247 TO-3PB Halogen Free NO NO Packaging Tube Tube Device Weight 6.1g (typ) 5.14g (typ) :201510D 1/9 R JCS50N20T ABSOLUTE RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse(note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy (note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) Repetitive Avalanche Energy(note 1) EAR ( 3) dv/dt Peak Diode Recovery dv/dt(note 3) Value JCS50N20WT/ABT 200 50 31 200 ±30 1000 50 27.7 Unit V A A A V mJ A mJ 5.4 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ,TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 277 2.22 -55~+150 300 W W/℃ ℃ ℃ :201510D 2/9 R ELECTRICAL CHARACTERISTICS JCS50N20T Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 200 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.22 - Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V,TC=25℃ VDS=160V, TC=125℃ - - 1 μA - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2 -4 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=25A - 42 50 mΩ Forward Transconductance gfs VDS = 40V, ID=25A (note 4) 27 - S Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ - 3250 4225 pF - 672 863 pF - 70 91 pF :201510D 3/9 R JCS50N20T ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time td(on) VDD=100V,ID=50A,RG=25Ω - 82 112 ns Turn-On rise time Turn-Off delay time tr td(off) VGS =10V (note 4,5) - 501 655 ns - 237 309 ns Turn-Off Fall time tf - 202 263 ns Total Gate Charge - Gate-Source charge - Gate-Drain charge Qg Qgs Qgd VDS =160V , ID=50A VGS =10V (note 4,5) - 90 110 nC - 26 - nC - 33 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current IS - - 50 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 200 A A Drain-Source Diode Forward VSD VGS=0V, IS=50A Voltage Reverse recovery time Reverse recovery charge trr VGS=0V, IS=50A Qrr dIF/dt=100A/μs (note 4) THERMAL CHARACTERISTIC - - 1.5 V - 175 - ns - 1.23 - μC Parameter Symbol Max JCS50N20WT/ABT Unit Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rth(j-c) Rth(j-A) 0.45 ℃/W 62.5 ℃/W : 1: 2:L=0.8mH, IAS=50A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=0.8mH, IAS=50A VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature :201510D 4/9 R ELECTRICAL CHARACTERISTICS (curves) JCS50N20T I D [A] On-Region Characteristics 100 10 VGS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V 1 0.1 0.01 0.1 Notes: 1. 250μs pulse test 2. TC=25℃ 1 10 V D S [V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.15 ID [A] Transfer Characteristics 100 10 150℃ 25℃ 1 Notes: 1.250μs pulse test 2.VDS=40V 0.1 2 4 6 8 10 VGS [V] Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RD S (on ) [ Ω ] 0.10 IDR [A] VGS=10V 0.05 VGS=20V Note:Tj=25℃ 0 20 40 60 80 100 120 I D [A] Capacitance Characteristics 7x103 Ciss=Cgs+Cgd(Cds=shorted) 6x103 Coss=Cds+Cgd 5x103 Crss=Cgd Ciss 4x103 3x103 2x103 1x103 0 100 Coss Crss 101 V DS Drain-Source Voltage [V] VGS Gate Source Voltage[V] 25℃ 1 150℃ Notes: 1. 250μs pulse test 2. VGS=0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VS D [V] Gate Charge Characteristics 1.1 12 VDS=40V 10 VDS=100V 8 6 VDS=160V 4 2 Notes: 0 ID=50A 0 10 20 30 40 50 60 70 80 90 100 Qg Toltal Gate Charge [nC] Capacitance [pF] :201510D 5/9 R ELECTRICAL CHARACTERISTICS (curves) JCS50N20T Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature 1.2 4.0 R D ( on ) (Normalized) BVDS (Normalized) 3.5 1.1 3.0 1.0 0.9 Notes: 1. VGS=0V 2.


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