Document
R JCS50N20T
JCS50N20T
MAIN CHARACTERISTICS
Package
ID VDSS Rdson-max (@Vgs=10V) Qg-typ
UPS
50A 200 V
50mΩ
90nC
APPLICATIONS High frequency switch
mode power supplies Electronic lamp ballasts
based on half bridge UPS
Crss dv/dt RoHS
FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT
Package
TO-247 TO-3PB
Halogen
Free NO NO
Packaging
Tube Tube
Device Weight 6.1g (typ) 5.14g (typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
- Drain-Source Voltage
Symbol
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current – pulse(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy (note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Energy(note 1)
EAR
( 3) dv/dt Peak Diode Recovery dv/dt(note 3)
Value JCS50N20WT/ABT
200 50 31 200 ±30
1000
50
27.7
Unit V A A A V
mJ
A
mJ
5.4 V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃
Operating and Storage Temperature TJ,TSTG Range
Maximum Lead Temperature for Soldering Purposes
TL
* *Drain current limited by maximum junction temperature
277 2.22 -55~+150
300
W W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS50N20T
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
200 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.22 -
Zero Gate Voltage Drain Current
IDSS
VDS=200V,VGS=0V,TC=25℃ VDS=160V, TC=125℃
-
- 1 μA - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2 -4 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=25A
- 42 50 mΩ
Forward Transconductance
gfs
VDS = 40V, ID=25A (note 4)
27 - S
Dynamic Characteristics
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VDS=25V, VGS =0V, f=1.0MHZ
- 3250 4225 pF - 672 863 pF - 70 91 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time
td(on)
VDD=100V,ID=50A,RG=25Ω
- 82 112 ns
Turn-On rise time Turn-Off delay time
tr td(off)
VGS =10V (note 4,5)
- 501 655 ns - 237 309 ns
Turn-Off Fall time
tf
- 202 263 ns
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Qg Qgs Qgd
VDS =160V , ID=50A VGS =10V (note 4,5)
- 90 110 nC - 26 - nC - 33 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
IS - - 50
Maximum Pulsed Drain-Source Diode Forward Current
ISM - - 200
A A
Drain-Source Diode Forward
VSD VGS=0V, IS=50A
Voltage
Reverse recovery time Reverse recovery charge
trr VGS=0V, IS=50A Qrr dIF/dt=100A/μs (note 4)
THERMAL CHARACTERISTIC
- - 1.5 V - 175 - ns - 1.23 - μC
Parameter
Symbol
Max JCS50N20WT/ABT
Unit
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Rth(j-c) Rth(j-A)
0.45 ℃/W 62.5 ℃/W
: 1: 2:L=0.8mH, IAS=50A, VDD=50V, RG=25 Ω,
TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS,
TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction
temperature 2:L=0.8mH, IAS=50A VDD=50V, RG=25 Ω,Starting
TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
JCS50N20T
I D [A]
On-Region Characteristics
100 10
VGS Top 15V
10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V
1
0.1
0.01 0.1
Notes: 1. 250μs pulse test 2. TC=25℃
1 10
V D S [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
0.15
ID [A]
Transfer Characteristics
100
10
150℃
25℃
1
Notes: 1.250μs pulse test 2.VDS=40V
0.1 2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
RD S (on ) [ Ω ]
0.10
IDR [A]
VGS=10V
0.05
VGS=20V Note:Tj=25℃
0 20 40 60 80 100 120
I D [A]
Capacitance Characteristics
7x103
Ciss=Cgs+Cgd(Cds=shorted)
6x103
Coss=Cds+Cgd
5x103
Crss=Cgd Ciss
4x103
3x103
2x103
1x103
0 100
Coss Crss
101
V DS Drain-Source Voltage [V]
VGS Gate Source Voltage[V]
25℃
1
150℃
Notes: 1. 250μs pulse test 2. VGS=0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VS D [V]
Gate Charge Characteristics
1.1
12
VDS=40V
10
VDS=100V
8
6
VDS=160V
4
2
Notes: 0 ID=50A
0 10 20 30 40 50 60 70 80 90 100
Qg Toltal Gate Charge [nC]
Capacitance [pF]
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ELECTRICAL CHARACTERISTICS (curves)
JCS50N20T
Breakdown Voltage Variation vs. Temperature
On-Resistance Variation vs. Temperature
1.2 4.0
R D ( on ) (Normalized)
BVDS (Normalized)
3.5 1.1
3.0
1.0
0.9 Notes: 1. VGS=0V 2.