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JCS640FH

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC ...


JILIN SINO-MICROELECTRONICS

JCS640FH

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Description
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC Package    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES  Low gate charge  Crss ( 25pF) Low Crss (typical 25pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capability RoHS RoHS product ORDER MESSAGE Order codes JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B Marking JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH Package Halogen Free Packaging IPAK DPAK DPAK TO-220C TO-220MF NO NO NO NO NO Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) 2.06 g(typ) 2.22 g(typ) :201510B 1/12 R ABSOLUTE RATINGS (Tc=25℃) Value Parameter - Drain-Source Voltage Symbol VDSS JCS640VH/RH/CH 200 Drain Current -continuous ( 1) Drain Current -pulse (note 1) Gate-Source Voltage ( 2) ID T=25℃ T=100℃ IDM VGSS 18 16 72 ±30 Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) 259 18 Repetitive Avalanche Current (note 1) EAR 14 ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 140 1.12 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering TL 300 Purposes * *Drain current limited by maximum junction temperature...




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