N-CHANNEL MOSFET
N N- CHANNEL MOSFET
R
JCS640H
MAIN CHARACTERISTICS
ID 18A
VDSS
200 V
Rdson-max (@Vgs=10V)
0.15Ω
Qg-typ
27.5nC
...
Description
N N- CHANNEL MOSFET
R
JCS640H
MAIN CHARACTERISTICS
ID 18A
VDSS
200 V
Rdson-max (@Vgs=10V)
0.15Ω
Qg-typ
27.5nC
Package
UPS
APPLICATIONS
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
UPS
FEATURES
Low gate charge
Crss ( 25pF) Low Crss (typical 25pF )
Fast switching
100% avalanche tested
dv/dt
Improved dv/dt capability
RoHS
RoHS product
ORDER MESSAGE
Order codes
JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B
Marking
JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH
Package Halogen Free Packaging
IPAK DPAK DPAK TO-220C TO-220MF
NO NO NO NO NO
Tube Tube Brede Tube Tube
Device Weight 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) 2.06 g(typ) 2.22 g(typ)
:201510B
1/12
R
ABSOLUTE RATINGS (Tc=25℃)
Value
Parameter - Drain-Source Voltage
Symbol VDSS
JCS640VH/RH/CH 200
Drain Current -continuous
( 1) Drain Current -pulse (note 1) Gate-Source Voltage ( 2)
ID T=25℃ T=100℃
IDM
VGSS
18 16 72
±30
Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current(note 1) IAR
( 1)
259 18
Repetitive Avalanche Current (note 1)
EAR
14
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
5.5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
140 1.12
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering
TL
300
Purposes *
*Drain current limited by maximum junction temperature...
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