Document
N R N-CHANNEL MOSFET
JCS10N70H
MAIN CHARACTERISTICS
Package
ID 10A VDSS 700 V Rdson(@Vgs=10V) 1.10 Ω Qg 55.0nC
z z z UPS
APPLICATIONS z High frequency switch
mode power supply z Electronic ballasts z UPS
z z Crss ( 10pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
JCS10N70CH JCS10N70FH
Marking
JCS10N70CH JCS10N70FH
Package
TO-220C TO-220MF
Halogen
Free NO NO
Packaging
Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS10N70H
Parameter
- Drain-Source Voltage
Drain Current -continuous
( 1)
Drain Current - pulse
(note 1)
Gate-Source Voltage
( 2)
Single Pulsed Avalanche Energy(note
2)
( 1)
Avalanche Current(note 1)
( 1)
Repetitive Avalanche Energy(note 1)
Symbol
VDSS ID T=25℃ T=100℃ IDM
VGSS
EAS
IAR
EAR
Value
JCS10N70CH JCS10N70FH
700 700 10 10* 6.3 6.3*
40 40*
±30
338
10
23.9
( 3) Peak Diode Recovery dv/dt(note 3)
dv/dt
5
Power Dissipation
PD TC=25℃ -Derate above 25℃
245 2.0
80 2.16
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
*
*Drain current limited by maximum junction temperature
Unit V A A A V
mJ
A mJ V/ns
W
W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS10N70H
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
700 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 1.00 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=700V,VGS=0V, TC=25℃ VDS=560V, TC=125℃
- - 10 μA - - 100 μA
Gate-body leakage current, Forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, Reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
3.0 - 5.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=5A
- 0.90 1.10 Ω
Forward Transconductance
gfs
VDS = 40V, ID=5.0A(note 4) - 9.5 -
S
Dynamic Characteristics
Input capacitance Output capacitance
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 890 1300 pF - 120 200 pF
Reverse transfer capacitance
Crss
- 10 14 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
td(on) tr td(off) tf Qg Qgs Qgd
VDD=300V,ID=10A,RG=10Ω (note 4,5)
VDS =560V , ID=10A VGS =10V (note 4,5)
JCS10N70H
- 20 35 - 6.5 9.5 - 42 62 - 8 12 32.3 38 55 9.35 11 15 15.3 18 20
ns ns ns ns nC nC nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
IS - - 10 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM - - 40 A
Drain-Source Diode Forw.