DatasheetsPDF.com

JCS10N70FH Dataheets PDF



Part Number JCS10N70FH
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS10N70FH DatasheetJCS10N70FH Datasheet (PDF)

N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID 10A VDSS 700 V Rdson(@Vgs=10V) 1.10 Ω Qg 55.0nC z z z UPS APPLICATIONS z High frequency switch mode power supply z Electronic ballasts z UPS        z z Crss ( 10pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS10N70CH JCS10N70FH Marking JCS10N70CH JCS10N70FH Package TO-220C .

  JCS10N70FH   JCS10N70FH



Document
N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID 10A VDSS 700 V Rdson(@Vgs=10V) 1.10 Ω Qg 55.0nC z z z UPS APPLICATIONS z High frequency switch mode power supply z Electronic ballasts z UPS        z z Crss ( 10pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS10N70CH JCS10N70FH Marking JCS10N70CH JCS10N70FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) :201406D 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS10N70H Parameter - Drain-Source Voltage Drain Current -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Energy(note 1) Symbol VDSS ID T=25℃ T=100℃ IDM VGSS EAS IAR EAR Value JCS10N70CH JCS10N70FH 700 700 10 10* 6.3 6.3* 40 40* ±30 338 10 23.9 ( 3) Peak Diode Recovery dv/dt(note 3) dv/dt 5 Power Dissipation PD TC=25℃ -Derate above 25℃ 245 2.0 80 2.16 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201406D 2/10 R ELECTRICAL CHARACTERISTICS JCS10N70H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 700 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 1.00 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V, TC=25℃ VDS=560V, TC=125℃ - - 10 μA - - 100 μA Gate-body leakage current, Forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, Reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=5A - 0.90 1.10 Ω Forward Transconductance gfs VDS = 40V, ID=5.0A(note 4) - 9.5 - S Dynamic Characteristics Input capacitance Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 890 1300 pF - 120 200 pF Reverse transfer capacitance Crss - 10 14 pF :201406D 3/10 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge td(on) tr td(off) tf Qg Qgs Qgd VDD=300V,ID=10A,RG=10Ω (note 4,5) VDS =560V , ID=10A VGS =10V (note 4,5) JCS10N70H - 20 35 - 6.5 9.5 - 42 62 - 8 12 32.3 38 55 9.35 11 15 15.3 18 20 ns ns ns ns nC nC nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current IS - - 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 40 A Drain-Source Diode Forw.


JCS10N70CH JCS10N70FH JCS4N80H


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)