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JCS6N70FC Dataheets PDF



Part Number JCS6N70FC
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS6N70FC DatasheetJCS6N70FC Datasheet (PDF)

N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson(@Vgs=10V) 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS6N70VC-O-V-N-B JCS6N70VC-R-V-N-B JCS6N70RC-O-R-N-B JCS6N70RC-O-R-N-.

  JCS6N70FC   JCS6N70FC


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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson(@Vgs=10V) 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS6N70VC-O-V-N-B JCS6N70VC-R-V-N-B JCS6N70RC-O-R-N-B JCS6N70RC-O-R-N-A JCS6N70CC-O-C-N-B JCS6N70FC-O-F-N-B JCS6N70FC-O-F2-N-B JCS6N70SC-O-F-N-B JCS6N70SC-O-F-N-A JCS6N70BC-O-F-N-B JCS6N70V JCS6N70V JCS6N70R JCS6N70R JCS6N70C JCS6N70F JCS6N70F JCS6N70S JCS6N70S JCS6N70B Package IPAK IPAK DPAK DPAK TO-220C TO-220MF TO-220MF-2 TO-263 TO-263 TO-262 Halogen Free NO YES NO NO NO NO NO NO NO NO Packaging Tube Tube Tube Reel Tube Tube Tube Tube Reel Tube Device Weight 0.35 g(typ) 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 2.19 g(typ) 1.37 g(typ) 1.37 g(typ) 1.71 g(typ) :201308C 1/15 R ABSOLUTE RATINGS (Tc=25℃) JCS6N70C Value Parameter Symbol JCS6N70CC/SC/BC/VC/ - Drain-Source Voltage VDSS RC 700 ID T=25℃ Drain Current -continuous T=100℃ 6.0 3.9 ( 1) Drain Current - pulse (note 1) IDM 24 Gate-Source Voltage VGSS ±30 ( 2) Single Pulsed Avalanche Energy(note 2) EAS 270 ( 1) Avalanche Current(note 1) IAR 6.0 ( 1) Repetitive Avalanche Energy(note 1) EAR 11.8 ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 120 1.04 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature TL for Soldering Purposes 300 * *Drain current limited by maximum junction temperature JCS6N70FC 700 6.0* 3.9* 24* 40 0.31 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201411D 2/15 R ELECTRICAL CHARACTERISTICS JCS6N70C Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 700 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.65 - V/℃ Zero Gate Voltage Drain Current Gate-body leakage current, forward IDSS IGSSF VDS=700V,VGS=0V, TC=25℃ VDS=560V, TC=125℃ VDS=0V, VGS =30V - - 10 μA - - 100 μA - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=3.0A - 1.26 1.6 Ω Forward Transconductance gfs VDS = 40V, ID=6.0A(note 4) - 4.9 - S Dynamic Characteristics Input capacitance Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 1620 1890 pF - 125 170 pF Reverse transfer capacitance Crss - 14 20 pF :201411D 3/15 R ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time td(on) tr VDD=350V,ID=6A,RG=25Ω (note 4,5) Turn-Off delay time td(off) Turn-Off Fall time tf Total Gate Charge - Gate-Source charge - Gate-Drain charge Qg Qgs Qgd VDS =560V , ID=6A VGS =10V (note 4,5) JCS6N70C - 11 31 ns - 35 80 ns - 46 95 ns - 40 92 ns - 31 41 nC - 6 - nC - 15 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current IS - - 6.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 24 A Drain-Source Diode Forward Voltage VSD VGS=0V, IS=6.0A - - 1.4 V Reverse recovery time Reverse recovery charge trr VGS=0V, IS=6.0A - 345 - ns Qrr dIF/dt=100A/μs (note 4) - 3.2 - μC THERMAL CHARACTERISTIC Max Parameter Symbol JCS6N70VC/RC/CC/SC/BC JCS6N70FC Unit Thermal Resistance, Junction Rth(j-c) 1.04 3.2 ℃/W to Case Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 62.5 ℃/W : Notes: 1: 1:Pulse width limited by maximum junction temperature 2:L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω, TJ=25℃ 3 : ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 2 : L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature 5: :201411D 4/15 R ELECTRICAL CHARACTERISTICS (curves) JCS6N70C On-Region Characteristics VGS Top 15V 10V 8V 10 7V 6.5V 6V 5.5V Bottom 5V ID [A] Transfer Characteristics 10 150℃ 1 25℃ ID [A] Notes: 1 1. 250μs pulse test 2. TC=25℃ 1 10 VDS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.6 VGS=10V 1.4 VGS=20V 1.2 Note :Tj=25℃ 0.0 1.5 3.0 4.5 6.0 ID [A] Capacitance Characteristics IDR [A] Notes: 1.250μs pulse test 2.VDS=40V 0.1 2 4 6 8 10 VGS [V] Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 25℃ 1 150℃ Notes: 1. 250μs pulse test 2. VGS =0V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VSD [V] Gate Charge Characteristics RDS (on) [ Ω ] VGS Gate Source Voltage[V] 12 VDS=560V .


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