Document
N R N-CHANNEL MOSFET
JCS6N70C
MAIN CHARACTERISTICS
Package
ID 6.0 A VDSS 700 V Rdson(@Vgs=10V) 1.6 Ω Qg 31 nC
z z z UPS
APPLICATIONS z High frequency switching
mode power supply z Electronic ballast z UPS
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS6N70VC-O-V-N-B JCS6N70VC-R-V-N-B JCS6N70RC-O-R-N-B JCS6N70RC-O-R-N-A JCS6N70CC-O-C-N-B JCS6N70FC-O-F-N-B JCS6N70FC-O-F2-N-B JCS6N70SC-O-F-N-B JCS6N70SC-O-F-N-A JCS6N70BC-O-F-N-B
JCS6N70V JCS6N70V JCS6N70R JCS6N70R JCS6N70C JCS6N70F JCS6N70F JCS6N70S JCS6N70S JCS6N70B
Package
IPAK IPAK DPAK DPAK TO-220C TO-220MF TO-220MF-2 TO-263 TO-263 TO-262
Halogen
Free NO YES NO NO NO NO NO NO NO NO
Packaging
Tube Tube Tube Reel Tube Tube Tube Tube Reel Tube
Device
Weight 0.35 g(typ) 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 2.19 g(typ) 1.37 g(typ) 1.37 g(typ) 1.71 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS6N70C
Value
Parameter
Symbol JCS6N70CC/SC/BC/VC/
- Drain-Source Voltage
VDSS
RC 700
ID T=25℃
Drain Current -continuous T=100℃
6.0 3.9
( 1)
Drain Current - pulse (note 1)
IDM
24
Gate-Source Voltage
VGSS
±30
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
270
( 1) Avalanche Current(note 1)
IAR
6.0
( 1) Repetitive Avalanche Energy(note 1)
EAR
11.8
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
5.5
Power Dissipation
PD TC=25℃ -Derate above 25℃
120 1.04
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature TL for Soldering Purposes
300
* *Drain current limited by maximum junction temperature
JCS6N70FC 700 6.0* 3.9* 24*
40 0.31
Unit V A A A
V
mJ
A
mJ
V/ns
W W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS6N70C
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
700 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
-
0.65 - V/℃
Zero Gate Voltage Drain Current
Gate-body leakage current, forward
IDSS IGSSF
VDS=700V,VGS=0V, TC=25℃ VDS=560V, TC=125℃
VDS=0V, VGS =30V
- - 10 μA - - 100 μA
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=3.0A
- 1.26 1.6 Ω
Forward Transconductance
gfs VDS = 40V, ID=6.0A(note 4) - 4.9 - S
Dynamic Characteristics
Input capacitance Output capacitance
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 1620 1890 pF - 125 170 pF
Reverse transfer capacitance
Crss
- 14 20 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time
td(on) tr
VDD=350V,ID=6A,RG=25Ω (note 4,5)
Turn-Off delay time
td(off)
Turn-Off Fall time
tf
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Qg Qgs Qgd
VDS =560V , ID=6A VGS =10V (note 4,5)
JCS6N70C
- 11 31 ns - 35 80 ns - 46 95 ns - 40 92 ns - 31 41 nC - 6 - nC - 15 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
IS - - 6.0 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM - - 24 A
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=6.0A
- - 1.4 V
Reverse recovery time Reverse recovery charge
trr VGS=0V, IS=6.0A
- 345 - ns
Qrr
dIF/dt=100A/μs (note 4)
- 3.2 - μC
THERMAL CHARACTERISTIC
Max
Parameter
Symbol JCS6N70VC/RC/CC/SC/BC JCS6N70FC Unit
Thermal Resistance, Junction Rth(j-c)
1.04
3.2 ℃/W
to Case
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5 ℃/W
:
Notes:
1:
1:Pulse width limited by maximum junction temperature
2:L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω, TJ=25℃
3 : ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, TJ=25℃
4::≤300μs,≤2%
2 : L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃
3:ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
5:
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ELECTRICAL CHARACTERISTICS (curves)
JCS6N70C
On-Region Characteristics
VGS Top 15V
10V 8V
10 7V
6.5V 6V
5.5V Bottom 5V
ID [A]
Transfer Characteristics
10
150℃
1
25℃
ID [A]
Notes: 1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
1.6
VGS=10V
1.4
VGS=20V 1.2 Note :Tj=25℃
0.0 1.5 3.0 4.5 6.0
ID [A]
Capacitance Characteristics
IDR [A]
Notes: 1.250μs pulse test 2.VDS=40V
0.1 2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
25℃
1
150℃
Notes: 1. 250μs pulse test 2. VGS =0V
0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VSD [V]
Gate Charge Characteristics
RDS (on) [ Ω ]
VGS Gate Source Voltage[V]
12
VDS=560V .