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JCS4N70C

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS4N70C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 700 V Rdson(Vgs=10V) 2.8Ω Qg 14nC z z ...


JILIN SINO-MICROELECTRONICS

JCS4N70C

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Description
N R N-CHANNEL MOSFET JCS4N70C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 700 V Rdson(Vgs=10V) 2.8Ω Qg 14nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS4N70VC-O-V-N-B JCS4N70VC-R-V-N-B JCS4N70RC-O-R-N-B JCS4N70RC-O-R-N-A JCS4N70CC-O-C-N-B JCS4N70FC-O-F-N-B Marking JCS4N70V JCS4N70V JCS4N70R JCS4N70R JCS4N70C JCS4N70F Package IPAK IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO YES NO NO NO NO Packaging Tube Tube Tube Reel Tube Tube Device Weight 0.35 g(typ) 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) :201411C 1/12 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol - Drain-Source Voltage Drain Current -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current (note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3) VDSS ID T=25℃ T=100℃ IDM VGSS EAS IAR EAR dv/dt JCS4N70 VC/RC Value JCS4N70CC 700 4.0 2.5 16 ±30 265 4.0 11.0 5.0 Power Dissipation PD TC=25℃ -Derate above25℃ 51 0.39 100 0.80 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for TL 300 Soldering Purposes * *Drain current limited by maximum ju...




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