N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS4N70C
MAIN CHARACTERISTICS
Package
ID 4.0 A VDSS 700 V Rdson(Vgs=10V) 2.8Ω Qg 14nC
z z ...
Description
N R N-CHANNEL MOSFET
JCS4N70C
MAIN CHARACTERISTICS
Package
ID 4.0 A VDSS 700 V Rdson(Vgs=10V) 2.8Ω Qg 14nC
z z z UPS
APPLICATIONS z High frequency switching
mode power supply z Electronic ballast z UPS
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes JCS4N70VC-O-V-N-B JCS4N70VC-R-V-N-B JCS4N70RC-O-R-N-B JCS4N70RC-O-R-N-A JCS4N70CC-O-C-N-B JCS4N70FC-O-F-N-B
Marking JCS4N70V JCS4N70V JCS4N70R JCS4N70R JCS4N70C JCS4N70F
Package IPAK IPAK DPAK DPAK TO-220C TO-220MF
Halogen Free
NO YES NO NO NO NO
Packaging Tube Tube Tube Reel Tube Tube
Device Weight
0.35 g(typ) 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ)
:201411C
1/12
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
- Drain-Source Voltage Drain Current -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current (note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3)
VDSS ID T=25℃ T=100℃ IDM VGSS EAS
IAR
EAR
dv/dt
JCS4N70 VC/RC
Value
JCS4N70CC
700
4.0 2.5
16
±30
265
4.0
11.0
5.0
Power Dissipation
PD TC=25℃ -Derate above25℃
51 0.39
100 0.80
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for
TL
300
Soldering Purposes
* *Drain current limited by maximum ju...
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