JCS2N65RC

N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 8.0 nC Package    LED APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies  Crss ( 3.8pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 3.8pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS2N65TC-O-T-N-B JCS2N65VC-O-V-N-B JCS2N65RC-O-R-N-B JCS2N65CC-O-C-N-B JCS2N65FC-O-F-N-B JCS2N65FC-O-F2-NB JCS2N65T JCS2N65V JCS2N65R JCS2N65C JCS2N65F JCS2N65F Package TO-92 IPAK DPAK TO-220C TO-220MF TO-220MF -K2 Halogen Free Packaging NO NO NO NO NO NO Brede Tube Tube Tube Tube Tube Device Weight 0.22 g(typ) 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 2.20 g(typ) ：201412B 1/19 R ABSOLUTE RATINGS (Tc=25℃) JCS2N65C Parameter Symbol JCS2N65 VC/RC Value JCS2N65 JCS2N65 CC FC JCS2N65 TC － VDSS 650 Drain-Source Voltage Drain Current-continuous ID T=25℃ T=100℃ 1.9 1.1 2.0 1.3 2.0* 1.3* （ 1） Drain Current – pulse IDM （note 1） 6.0 6.0* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche EAS 110 Energy（note 2） （ 1） Avalanche Current（note IAR 1） 1.9 （ 1） Repetitive Avalanche Current （note 1） EAR 4.2 （ 3） Peak Diode Recovery dv/dt 4.6 dv/dt （note 3） Operating and Storage T ，TJ STGB B -55～+150 Temperature Range * *Drain current...