3000PT

SEMICONDUCTOR 3000PT Series RRooHHSS Instantaneous on-state voltage , V Max. On-state dissipation , W SEMICONDUCTOR Fig. 1 Peak on-state voltage Vs. Peak on-state Current 2 1.6 Tj = 125 C 1.2 0.8 0.4 100 1000 10000 Instantaneous on-state current , A Transient thermal impedance , C / W 3000PT Series RRooHHSS Fig. 2 Max. Junction to heatsink thermal impedance Vs. Time 0.018 0.015 0.012 0.009 0.006 0.003 0 0.001 0.01 0.1 Time , S 1 10 4500 4000 3500 3000 Fig. 3 Max. Power Dissipation Vs. Mean on-state Current 180 0 180 60 Conduction Angle 120 90 2500 30 2000 1500 1000 500 0 0 1000 2000 3000 Mean on-state current , A Fig. 5 4000 3500 Max. Power Dissipation Vs. Mean on-state Current 360 DC 270 3000 180 2500 2000 1500 Conduction Angle 90 60 30 120 1000 500 0 0 800 1600 2400 3200 Mean on-state current , A Case temperature , C Case temperature , C Fig. 4 Max. heatsink Temperature Vs. Mean on-state Current 140 120 0 180 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 1000 2000 3000 Mean on-state current , A 4000 Fig. 6 Max. heatsink Temperature Vs. Mean on-state Current 140 360 120 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 270 DDC 1000 2000 3000 4000 Mean on-state current , A 5000 Max. On-state dissipation , W www.nellsemi.com Page 2 of 2 ...