FM200HB1D5B

SEMICONDUCTOR TECHNICAL DATA FM200HB1D5B 150V / 200A 2 - PACK MOSFET MODULE (Half - Bridge) FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Motor control Battery management system Electric vehicle INTERNAL CIRCUIT 12 1. D2/S1 2. S2 3. D1 4. G1 5. S1 6. G2 7. S2 6 7 3 5 4 OUTLINE DRAWING 13+_ 0.3 13+_ 0.3 13+_ 0.3 Unit : mm 14 _+ 0.3 1 23 23+_ 0.3 23+_ 0.3 80+_ 0.5 93+_ 0.5 6 7 5 4 17+_ 0.3 17 _+0.3 25 _+0.3 28 _+0.5 35 _+0.5 6 _+0.5 30 _+0.5 31 _+0.5 30 _+ 0.5 22 _+ 0.5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Drain-to-Source Breakdown Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Isolation Voltage Test @TC=25 @TC=100 @TC=25 , Pulsed AC@1minute Junction Temperature Storage Temperature Weight Mounting Torque (M6) Terminal Connection Torque (M5) SYMBOL VDSS VGSS ID IDM VISO TJ Tstg Weight M M RATING 150 30 340 240 1300 2500 -40 +150 -40 +125 360 5 5 4 UNIT V V A A V g Nm Nm 2013. 7. 24 Revision No : 0 1/2 FM200HB1D5B ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain to Source Leakage Current Gate to Source Leakage Current Drain to Source ON Resistance Dynamic Total Gate Charge Gate to Source Charge Gate to Source Charge Turn On Delay Time Rise Time Turn Off Delay Tine Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacit...