E65A21VBS

SEMICONDUCTOR TECHNICAL DATA E65A21VBS, E65A21VBR STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=65A. Zener Voltage : 21V(Typ.) POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current IF(AV) IFSM Non-Repetitive Peak Reverse Surge Current (10mS) IRSM Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature VRSM VRM Tj Storage Temperature Range Tstg RATING 65 450 (60Hz) 65 19 16 -40 215 -40 215 UNIT A A A V V A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4 +_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.5 F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Zener Voltage VF VZ Reverse Current IR Transient Thermal Resistance Breakdown Voltage Reverse Leakage Current Under High Temperature VF Vbr HIR Temperature Resistance Rth TEST CONDITION IFM=100A IZ=10mA VR=20V IFM=100A, IM=100mA, Pw=100mS Irsm=65A, Pw=10mS Ta=150 , VR=20V DC total junction to case MIN. 19 - - - TYP. 21 - - - MAX. 1.05 23 0.3 50 34 UNIT V V A mV V 100 A 0.5 /W 2004. 3. 11 Revision No : 0 1/1 ...