NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P2003BVG
SOP-8 Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(O...
NIKO-SEM
N-Channel Enhancement Mode Field Effect
Transistor
P2003BVG
SOP-8 Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 20m
ID 8A
D
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
Power Dissipation
TC = 25 °C TC = 70 °C
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
VDS VGS
ID
IDM
PD
Tj, Tstg TL
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
G : GATE D : DRAIN S : SOURCE
LIMITS 30 ±20 8 6 32 2.5 1.6
-55 to 150 275
UNITS V V
A
W °C
MAXIMUM 50
UNITS °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS VGS(th) IGSS
IDSS
ID(ON)
STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
30 1 1.5 2.5
V
±100 nA
1 µA
10
8A
1 JUL-25-2005
NIKO-SEM
N-Channel Enhancement Mode Field Effect
Transistor
P2003BVG
SOP-8 Lead-Free
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON) gfs
VGS = 4.5V, ID = 6A VGS = 10V, ID = 8A VDS = 15V...