M29W640GT

64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VPP = 12V for fast program (optional) Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random access: 60ns, 70ns, 90ns Fast program commands – 2-word/4-byte program (without VPP = 12V) – 4-word/8-byte program (with VPP = 12V) – 16-word/32-byte write buffer Programming time – 10µs per byte/word TYP – Chip program time: 10 s (4-word program) – Double word/quadruple byte program Memory organization – M29W640GH/L 128 main blocks, 64KB each – M29W640GT/B 127 main blocks, 64KB each and 8 boot blocks, 8KB each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation Hardware block protection – VPP/WP# pin for fast program and write protect – Temporary block unprotect mode Common Flash interface – 64-bit security code 128-word extended memory block – Extra block used as security block or to store additional information Low power consumption: Standby and automatic mode 100,000 PROGRAM/ERASE cycles per block Electronic signature – Manufacturer code: 0020h Device summary: part number and device code – M29W640GH: uniform, last block protected by VPP/WP# – 227Eh + 220Ch + 2201h – M29W640G...