3135GN-280LV
280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is a...
3135GN-280LV
280 Watts 50 Volts 200 s, 20% S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT
transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20%
duty factor across the 3100 to 3500 MHz band. This hermetically sealed
transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25C
616 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS)
125 V -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +125 C
Operating Junction Temperature +250 C
CASE OUTLINE 55-KP
Common Source
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions1
Min Typ Max Units
Pout
Output Power
Pin=14.1W, Freq=3100,3300,3500 MHz 280 330
W
Gp Power Gain
Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7
dB
D Drain Efficiency Dr Droop
Pin=14.1W, Freq=3100,3300,3500 MHz Pin=14.1W, Freq=3100,3300,3500 MHz
50 58 0.2 0.5
% dB
VSWR-T Өjc
Load Mismatch Tolerance
Pin=14.1W, Freq=3100 MHz
3:1
Thermal Resistance
Pulse Width=200 S, Duty=20%
.39
1 Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical)
°C/W
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VgS ...