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MUPTB24e3 Dataheets PDF



Part Number MUPTB24e3
Manufacturers Microsemi
Logo Microsemi
Description Surface Mount Transient Voltage Suppressors
Datasheet MUPTB24e3 DatasheetMUPTB24e3 Datasheet (PDF)

MUPT5e3 – MUPT48e3 and MUPTB5e3 – MUPTB48e3 Available 5V – 48V Powermite1, Surface Mount Transient Voltage Suppressors DESCRIPTION Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible electrical degradation under repeated surge conditions. Both unidirectional and bidirectional configurations are available. In addition to its size advantages, the Powermite pac.

  MUPTB24e3   MUPTB24e3


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MUPT5e3 – MUPT48e3 and MUPTB5e3 – MUPTB48e3 Available 5V – 48V Powermite1, Surface Mount Transient Voltage Suppressors DESCRIPTION Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible electrical degradation under repeated surge conditions. Both unidirectional and bidirectional configurations are available. In addition to its size advantages, the Powermite package includes a fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at assembly and a unique locking tab design serves as an integral heat sink. Its innovative design makes this device fully compatible for use with automatic insertion equipment. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES  Powermite package with standoff voltages 5 to 48 V.  Both unidirectional and bidirectional polarities: -Anode to case bottom (MUPT5e3 thru MUPT48e3) -Bidirectional (MUPTB5e3 thru MUPTB48e3)  Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.  100% surge current testing of all parts.  Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.  Both RoHS and non-RoHS compliant versions available. APPLICATIONS / BENEFITS  Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  Protection from switching and induced RF transients. -Integral heat sink / locking tabs -Fully metallic bottom side eliminates flux entrapment  Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.  Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: MUPT5 /MUPTB8 to 17 Class 2: MUPT5 /MUPTB5 to 12 High-Reliability Screening available in reference to MIL-PRF-19500 Tested in accordance with the requirements of AEC-Q101 DO-216AA Package MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient (1) Thermal Resistance Junction-to-Case (base tab) Peak Pulse Power (see Figure 1 and Figure 2) MUPT5e3 thru MUPT48e3: MUPTB5e3 thru MUPTB48e3: Symbol TJ / TSTG RӨJA RӨJC PPP Value -65 to +150 240 15 @ 8/20 µs @10/1000µs 1000 150 1000 150 Unit oC oC/W oC/W W Rated Average Power Dissipation (base tab < 112 oC) Impulse Repetition Rate (duty factor) Solder Temperature @ 10 s PM(AV) TSP Notes: 1. When mounted on FR4 PC board with 1 oz copper. 2.5 0.01 260 W % oC Power Discretes & Modules Business Unit Discrete Products Group Microsemi Corporation PDM – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 PDM – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01103-1, Rev. A (09/01/15) ©2015 Microsemi Corporation Page 1 of 5 MUPT5e3 – MUPT48e3 and MUPTB5e3 – MUPTB48e3 MECHANICAL and PACKAGING  CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0.  TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026.  MARKING: Anode to TAB 1: “T” plus the last two digits of part number underlined, e.g. MUPT5e3 is T05▪, MUPT12e3 is T12▪ Bipolar: “B” plus the last two digits of part number underlined, e.g. MUPTB8e3 is B08▪, MUPTB12e3 is B12▪, etc. Please note dot suffix (for e3 suffix)  POLARITY: Anode to TAB 1 (bottom) as described in marking above and on last page.  TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities.  WEIGHT: Approximately 0.016 gram.  See package dimensions on last page. PART NOMENCLATURE Applicable to unidirectional MUPT5e3 – MUPT48e3 only: M UPT 5 (e3) Reliability Level* M MA MX MXL *(See Hi-Rel NonHermetic Product Portfolio) Powermite RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Rated Standoff Voltage 5V - 48V Applicable to bidirectional MUPTB5e3 – MUPTB48e3 only: M UPT B 5 (e3) Reliability Level* M MA MX MXL *(See Hi-Rel NonHermetic Product Portfolio) Powermite Bi-directional RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Rated Standoff Voltage 5V - 48V RF01103-1, Rev. A (09/01/15) ©2015 Microsemi Corporation Page 2 of 5 MUPT5e3 – MUPT48e3 and MUPTB5e3 – MUPTB48e3 Symbol V(BR) VWM PPP ID IPP C SYMBOLS & DEFINITIONS Definition Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range. Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform. Standby Current: The maximum current that will flow at the specified voltage and temperature. Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform. Capacitance: The capacitan.


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