C4365

Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE fT Cob Cre VCB=15V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCE=3V, IC=10mA VCB=3V, f=1MHz VCB=3V, f=1MHz * : The 2SC4365 is classified by 10mA hFE as follows : 40 2 80 (Note) Marking : PT hFE rank : 2, 3, 4 60 3 120 100 4 200 0.8 1.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 25 15 3 50 250 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 40* 3.0 0.9 0.85 max 1.0 1.0 200* 1.5 Unit µA µA GHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s c...