IHW30N160R2
IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Pow...
Description
IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution
G
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
Low EMI Qualified according to JEDEC1 for target applications
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking Soft Switching Applications
C E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) Diode forward current
TC = 25°C
TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C Operating junction temperature
Storage temperature
Solder...
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