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DF10G5M4N

Part Number	DF10G5M4N
Manufacturer	Toshiba Semiconductor
Description	ESD Protection Diode
Published	Mar 8, 2016
Detailed Description	ESD Protection Diodes Silicon Epitaxial Planar DF10G5M4N DF10G5M4N 1. Applications ESD Protection Note: This product i...
Datasheet	DF10G5M4N PDF File

Overview

ESD Protection Diodes Silicon Epitaxial Planar DF10G5M4N DF10G5M4N 1.
Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit DFN10 1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD (Note 1) ±20 kV Electrostatic discharge voltage (IEC61000-4-2)(Air) ±20 Peak pulse power (tp = 8/20 µs) P...

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DF10G5M4N ESD Protection Diode - Toshiba Semiconductor

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