RADIATION HARDENED POWER MOSFET
PD-96911A
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3 6...
Description
PD-96911A
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3 60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Part Number IRHNJ597034CM IRHNJ593034CM
Radiation Level 100K Rads (Si) 300K Rads (Si)
RDS(on) 0.08Ω 0.08Ω
ID -20A -20A
QPL Part Number JANSR2N7520T3 JANSF2N7520T3
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic
Features:
TO-257AA
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
n ESD Rating: Class 1C per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage S...
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