JANSR2N7547T3

PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CHANNEL REF: MIL-PRF-19500/712 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3 IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A JANSF2N7547T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. T0-257AA Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanc...