Document
BLS8G2731L-400P; BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 1 — 26 May 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Test signal
f (GHz)
VDS (V)
PL(1dB) (W)
Gp [1] (dB)
D [1] (%)
PL(2dB) (W)
Gp [2] (dB)
D [2] (%)
pulsed RF 2.7 to 2.9 32 540 11 45 610 10 46
2.9 to 3.1 32 490 12 47 550 11 49
2.7 to 3.1 32 530 12 45 590 11 47
[1] at 1 dB gain compression. [2] at 2 dB gain compression.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pinning Pin Description BLS8G2731L-400P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS8G2731LS-400P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
Version
BLS8G2731L-400P -
flanged balanced ceramic package; 2 mounting holes; SOT539A 4 leads
BLS8G2731LS-400P -
earless flanged balanced ceramic package; 4 leads SOT539B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
6 65 [1] -
Max 65 +11 +150 225
Unit V V C C
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator.
BLS8G2731L-400P_LS-400P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 13
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Zth(j-mb) transient thermal impedance from junction to mounting base
Conditions Tcase = 85 C; PL = 400 W
tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 %
Typ Unit
0.067 K/W 0.083 K/W 0.091 K/W 0.082 K/W
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
VGS(th) IDSS IDSX
gate-source threshold voltage drain leakage current drain cut-off current
IGSS gfs RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions VGS = 0 V; ID = 3 mA
VDS = 10 V; ID = 300 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 15.0 A VGS = VGS(th) + 3.75 V; ID = 10.5 A
Min 65
1.5 -
-
Typ Max Unit - -V
1.9 2.3 V
- 2.8 A
51 -
A
- 280 21 0.058 -
nA S
Table 7. RF characteristics
Test signal: pulsed RF; f = 3.1 GHz; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 200 mA; Tcase = 25 C; unless otherwise specified, in a class-AB narrow band production circuit.
Symbol Parameter
Conditions Min Typ Max Unit
Gp D RLin Pdroop(pulse) tr tf PL(2dB)
power gain drain efficiency input return loss pulse droop power rise time fall time output power at 2 dB gain compression
PL = 400 W 10.3 13 -
dB
PL = 400 W 43 47 -
%
PL = 400 W -
8 -
dB
PL = 400 W -
0 0.5 dB
PL = 400 W -
5 50 ns
PL = 400 W -
5 50 ns
400 - - W
BLS8G2731L-400P_LS-400P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 13
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS8G2731L-400P and BLS8G2731LS-400P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 200 mA; PL = 400 W; tp = 300 s; = 10 %.
7.2 Impedance information
Table 8. f (GHz) 2.7 2.9 3.1
Typical impedance ZS[1] () 1.0 7.0j 1.5 8.5j 4.0 9.0j
[1] Impedances are taken at a single halve of the push-pull transistor
ZL[1] () 1.8 4.9j 2.5 5.2j 3.6 4.7j
JDWH =6
JDWH
GUDLQ =/
GUDLQ DDN
Fig 1. Definition of transistor impedance
BLS8G2731L-400P_LS-400P
Product data s.