BLS7G2933S-150

BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp ηD (dB) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 150 13.5 47 20 6 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 150 W ‹ Power gain = 13.5 dB ‹ Efficiency = 47 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (2.9 GHz to 3.3 GHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range NXP Semiconductors BLS7G2933S-150 LDMOS S-band radar power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 1 3 [1] 2 1 2 3 sym112 Table 3. Ordering informatio...