BLS7G2730L-200P; BLS7G2730LS-200P
LDMOS S-band radar power transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Prod...
BLS7G2730L-200P; BLS7G2730LS-200P
LDMOS S-band radar power
transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C.
Test signal
f
VDS
(GHz)
(V)
Class-AB production test circuit
pulsed RF [1]
2.7 to 3.0
32
Application circuit
pulsed RF [2]
2.7 to 3.0
32
pulsed RF [3]
2.9 to 3.1
32
[1] tp = 300 s; = 10 %; IDq = 100 mA [2] tp = 3000 s; = 20 %; IDq = 50 mA [3] tp = 500 s; = 20 %; IDq = 50 mA
PL Gp (W) (dB)
200 12
220 12.5 220 12.5
D tr (%) (ns)
48 8
50 20 50 20
tf (ns)
5
6 6
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2700 MHz to 3000 MHz
NXP Semiconductors
BLS7G2730L(S)-200P
LDMOS S-band radar power
transistor
2. Pinning information
Table 2. Pinning Pin Description BLS7G2730L-200P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS7G2730LS-200P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Si...
