Document
BLS7G2729L-350P; BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 5 — 16 May 2014
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W) (dB) (%) (ns) (ns)
pulsed RF
2.7 to 2.9 32 350 13 50 8
5
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pinning Pin Description BLS7G2729L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS7G2729LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
Version
BLS7G2729L-350P -
flanged balanced ceramic package; 2 mounting holes; SOT539A 4 leads
BLS7G2729LS-350P -
earless flanged balanced ceramic package; 4 leads SOT539B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
0.5 65 [1] -
Max 65 +11 +150 225
Unit V V C C
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator.
BLS7G2729L-350P_LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 16 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 13
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Zth(j-mb) transient thermal impedance from junction to mounting base
Conditions Tcase = 85 C; PL = 350 W
tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 %
Typ Unit
0.07 K/W 0.09 K/W 0.10 K/W 0.09 K/W
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
VGS(th) IDSS IDSX
gate-source threshold voltage drain leakage current drain cut-off current
IGSS gfs RDS(on)
gate leakage current
forward transconductance
drain-source on-state res.