BLP8G10S-45PG

BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev. 1 — 25 July 2013 Product data sheet 1. Product profile 1.1 General description The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 960 28 2.5 20.8 19.8 49 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified. 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation (700 MHz to 1000 MHz)  Excellent thermal stability  High power gain  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  W-CDMA  LTE  GSM NXP Semiconductors BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLP8G10S-45P (SOT1223-1) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 source [1] Simplified outline  SLQLQGH[  BLP8G10S-45PG (SOT1224-1) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 source [1]  SLQLQGH[  [1] Connected to flange. 3. Ordering information Graphic symbol      DDD      DDD Table ...